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| STGP3NB60HD - STGP3NB60HDFP STGB3NB60HD N-CHANNEL 3A - 600V - TO-220/TO-220FP/D2PAK PowerMESHTM IGBT TYPE STGB3NB60HD STGP3NB60HD STGP3NB60HDFP s s s s s s VCES 600 V 600 V 600 V VCE(sat) (Max) @25C < 2.8 V < 2.8 V < 2.8 V IC(#) @100C 6A 6A 6A 1 2 1 3 2 3 HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW GATE CHARGE HIGH FREQUENCY OPERATION HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCHTM ANTIPARALLEL DIODE TO-220 3 1 TO-220FP D2PAK INTERNAL SCHEMATIC DIAGRAM DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS s SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s ORDERING INFORMATION SALES TYPE STGB3NB60HDT4 STGP3NB60HD STGP3NB60HDFP MARKING GB3NB60HD GP3NB60HD GP3NB60HDFP PACKAGE D2PAK TO-220 TO-220FP PACKAGING TAPE & REEL TUBE TUBE September 2003 1/12 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STGP3NB60HD STGB3NB60HD VCES VGE IC IC ICM ( ) PTOT Tstg Tj Collector-Emitter Voltage (VGS = 0) Gate-Emitter Voltage Collector Current (continuous) at TC = 25C (#) Collector Current (continuous) at TC = 100C (#) Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Storage Temperature Operating Junction Temperature 50 0.4 -55 to 150 STGP3NB60HDFP 600 20 10 6 24 25 0.2 V V A A A W W/C C Unit ( ) Pulse width limited by safe operating area THERMAL DATA TO-220/D2PAK Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 2.5 62.5 TO-220FP 5 C/W C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collector-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 A, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20V , VCE = 0 Min. 600 50 100 100 Typ. Max. Unit V A A nA ON (1) Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250A VGE = 15V, IC = 3 A VGE = 15V, IC = 3 A, Tj =125C Min. 3 2.4 1.9 Typ. Max. 5 2.8 Unit V V V (#) Calculated according to the iterative formula: T JMAX - T C I C ( T C ) = -------------------------------------------------------------------------------------R THJ - C x VCESAT ( MAX )(T C, I C) 2/12 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs Cies Coes Cres Qg Qge Qgc ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current Test Conditions VCE = 25 V , IC =3 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Typ. 2.4 235 33 6.6 21 6 7.6 12 27 Max. Unit S pF pF pF nC nC nC A VCE = 480V, IC = 3 A, VGE = 15V Vclamp = 480 V , Tj = 125C RG = 10 Test Conditions VCC = 480 V, IC = 3 A RG = 10 , VGE = 15 V VCC= 480 V, IC = 3 A RG=10 VGE = 15 V,Tj = 125C SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Min. Typ. 5 11 400 77 Max. Unit ns ns A/s J SWITCHING OFF Symbol tc tr(Voff) td(off) tf Eoff(**) Ets tc tr(Voff) td(off) tf Eoff(**) Ets Parameter Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 480 V, IC = 3 A, RGE = 10 , VGE = 15 V Tj = 125 C Test Conditions Vcc = 480 V, IC =3 A, RGE = 10 , VGE = 15 V Min. Typ. 76 36 53 77 33 110 180 82 58 110 88 165 Max. Unit ns ns ns ns J J ns ns ns ns J J Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) COLLECTOR-EMITTER DIODE Symbol If Ifm Vf trr Qrr Irrm Parameter Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 3 A If = 3 A, Tj = 125 C If = 3 A ,VR = 35 V, Tj =125C, di/dt = 100 A/s 1.6 1.4 45 70 2.7 Test Conditions Min. Typ. Max. 3 24 2.0 Unit A A V V ns nC A 3/12 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD Thermal Impedance for TO-220/D2PAK Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature 4/12 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD Collector-Emitter On Voltage vs Collettor Current Gate Threshold vs Temperature Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance 5/12 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD Total Switching Losses vs Temperature Emitter-collector Diode Characteristics Total Switching Losses vs Collector Current Switching Off Safe Operating Area 6/12 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/12 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD TO-220 MECHANICAL DATA mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 oP Q 8/12 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 D F G1 H F2 L2 L5 E 123 L4 G 9/12 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD D2PAK MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 10/12 3 1 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 BASE QTY 1000 * on sales type 11/12 STGP3NB60HD - STGP3NB60HDFP - STGB3NB60HD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 12/12 |
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